Effect of Sn doping on photoconductivity in amorphous As2Se3 and AsSe films

被引：49

作者：

Iovu, MS

Shutov, SD

Arkhipov, VI

Adriaenssens, GJ

机构：

[1] Ctr Optoelect, MD-2028 Kishinev, Moldova

[2] Katholieke Univ Leuven, Lab Halfgeleiderfysica, B-3001 Heverlee, Belgium

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 299卷

关键词：

D O I：

10.1016/S0022-3093(01)01067-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The kinetics of transient photocurrents in tin-doped a-As2Se3 and a-AsSe films are found to be strongly dependent on the light intensity and temperature. as well as on the glass composition and tin concentration. The experimental results are interpreted in terms of the multiple-trapping model with the photoconductivity kinetics determined by trap-controlled recombination. The shape of the photocurrent transients was found to be mainly controlled by deep carrier trapping, whereby the energy distribution and concentration of the deep traps is determined by the structure and composition of the doped amorphous films. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1008 / 1012

页数：5

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