Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors

被引：24

作者：

Ishii, K ^{[1
]}

Murata, K ^{[1
]}

Ida, M ^{[1
]}

Kurishima, K ^{[1
]}

Enoki, T ^{[1
]}

Shibata, T ^{[1
]}

Sano, E ^{[1
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 10期

关键词：

D O I：

10.1049/el:20020313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A selector integrated circuit (IC) as a benchmark, to assess the performances of new undoped-emitter InP/InGaAs heterojunction bipolar transistors (HBTs) has been designed and fabricated. Operation of the selector gate at 86 Gbit/s has been achieved using an HBT developed by the authors, which exhibits the f(T) of 140 GHz and f(max) of 200 GHz at a collector current density of 50 kA/cm(2), This indicates that InP/InGaAs HBTs have excellent speed performance for making ultra-high-speed ICs with data rates approaching 100 Gbit/s.

引用

页码：480 / 481

页数：2

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