Recent progress of GaN power devices for automotive applications

被引：292
作者：
Kachi, Tetsu [1 ]
机构：
[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 10期
关键词：
CURRENT COLLAPSE; BREAKDOWN VOLTAGE; THRESHOLD VOLTAGE; ALGAN/GAN HEMTS; DEPLETION MODE; SURFACE-STATES; COIMPLANTATION; ENHANCEMENT; CRYSTAL; GROWTH;
D O I：
10.7567/JJAP.53.100210
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs). To improve the efficiency of HVs and EVs, better performance characteristics than those of Si power devices, for example, lower on-resistance, higher speed, higher operation temperature, are required for the power devices. GaN power devices are promising candidates for satisfying the requirements. A lateral GaN power device with a blocking voltage of 600 V and a vertical GaN power device with a blocking voltage of 1200 V are suitable for medium power applications for sub systems and high-power applications for the drive of main motors, respectively. Power device applications in HVs and EVs and the current status of the GaN power device are presented. The reliability of the GaN power device is also discussed. (C) 2014 The Japan Society of Applied Physics
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页数：10
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