Intensity Switchable and Wide-Angle Mid-Infrared Perfect Absorber with Lithography-Free Phase-Change Film of Ge2Sb2Te5

被引：10
作者：
Hua, Xiaomin [1 ]
Zheng, Gaige [1 ,2 ]
机构：
[1] Nanjing Univ Informat Sci & Technol, Sch Phys & Optoelect Engn, Jiangsu Key Lab Optoelect Detect Atmosphere & Oce, Nanjing 210044, Jiangsu, Peoples R China
[2] Nanjing Univ Informat Sci & Technol, Jiangsu Collaborat Innovat Ctr Atmospher Environm, Nanjing 210044, Jiangsu, Peoples R China
来源：
MICROMACHINES | 2019年 / 10卷 / 06期
基金：
中国国家自然科学基金;
关键词：
perfect absorption; phase-change materials; silicon carbide; lithography-free; ABSORPTION;
D O I：
10.3390/mi10060374
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The range of fundamental phenomena and applications achievable by metamaterials (MMs) can be significantly extended by dynamic control over the optical response. A mid-infrared tunable absorber which consists of lithography-free planar multilayered dielectric stacks and germanium antimony tellurium alloy (Ge2Sb2Te5, GST) thin film was presented and studied. The absorption spectra under amorphous and crystalline phase conditions was evaluated by the transfer matrix method (TMM). It was shown that significant tuning of absorption can be achieved by switching the phase of thin layer of GST between amorphous and crystalline states. The near unity (>90%) absorption can be significant maintained by incidence angles up to 75 under crystalline state for both transverse electric (TE) and transverse magnetic (TM) polarizations. The proposed method enhances the functionality of MMs-based absorbers and has great potential for application to filters, emitters, and sensors.
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页数：8
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