Light-induced gaps in semiconductor band-to-band transitions -: art. no. 217403

被引：71
作者：
Vu, QT
Haug, H
Mücke, OD
Tritschler, T
Wegener, M
Khitrova, G
Gibbs, HM
机构：
[1] Univ Frankfurt, Inst Theoret Phys, D-60054 Frankfurt, Germany
[2] Univ Karlsruhe TH, Inst Angew Phys, D-76131 Karlsruhe, Germany
[3] Univ Arizona, Ctr Opt Sci, Tucson, AZ 85721 USA
来源：
PHYSICAL REVIEW LETTERS | 2004年 / 92卷 / 21期
关键词：
D O I：
10.1103/PhysRevLett.92.217403
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We observe a triplet around the third harmonic of the semiconductor band gap when exciting 50-100 nm thin GaAs films with 5 fs pulses at 3x10(12) W/cm(2). The comparison with solutions of the semiconductor Bloch equations allows us to interpret the observed peak structure as being due to a two-band Mollow triplet. This triplet in the optical spectrum is a result of light-induced gaps in the band structure, which arise from coherent band mixing. The theory is formulated for full tight-binding bands and uses no rotating-wave approximation.
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页码：217403 / 1
页数：4
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