Thermodynamic Ground States of Complex Oxide Heterointerfaces

被引:35
作者
Gunkel, F. [1 ]
Hoffmann-Eifert, S. [2 ,3 ]
Heinen, R. A. [2 ,3 ]
Christensen, D. V. [4 ]
Chen, Y. Z. [4 ]
Pryds, N. [4 ]
Waser, R. [2 ,3 ]
Dittmann, R. [2 ,3 ]
机构
[1] Rhein Westfal TH Aachen, IWE2, Inst Elect Mat, D-52056 Aachen, Germany
[2] Forschungszentrum Julich, Peter Gruenberg Inst, D-52425 Julich, Germany
[3] Forschungszentrum Julich, JARA FIT, D-52425 Julich, Germany
[4] Tech Univ Denmark, Dept Energy Convers & Storage, Riso Campus, DK-4000 Roskilde, Denmark
关键词
oxide heterointerfaces; 2DEG; defect-chemistry; thermodynamics; interface chemistry; 2-DIMENSIONAL ELECTRON-GAS; MOBILITY; INTERFACES; HETEROSTRUCTURES; CONDUCTIVITY; CREATION; CHARGE;
D O I
10.1021/acsami.6b12706
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The formation mechanism of 2-dimensional electron gases (2DEGs) at heterointerfaces between nominally insulating oxides is addressed with a thermodynamical approach. We provide a comprehensive analysis of the thermodynamic ground states of various 2DEG systems directly probed in high temperature equilibrium conductivity measurements. We unambiguously identify two distinct classes of oxide heterostructures: For epitaxial perovskite/perovskite heterointerfaces (LaAlO3/SrTiO3, NdGaO3/SrTiO3, and (La,Sr)(Al,Ta)O-3/SrTiO3), we find the 2DEG formation being based on charge transfer into the interface, stabilized by the electric field in the space charge region. In contrast, for amorphous LaAlO3/SrTiO3 and epitaxial gamma-Al2O3/SrTiO3 heterostructures, the 2DEG formation mainly relies on the formation and accumulation of oxygen vacancies. This class of 2DEG structures exhibits an unstable interface reconstruction associated with a quenched nonequilibrium state.
引用
收藏
页码:1086 / 1092
页数:7
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