Hydrogenated Silicon Nitride SiNx:H Deposited by Dielectric Barrier Discharge for Photovoltaics

被引：15

作者：

Massines, Francoise ^{[1
]}

Silva, Jose ^{[1
,2
]}

Lelievre, Jean-Francois ^{[1
]}

Bazinette, Remy ^{[1
,3
]}

Vallade, Julien ^{[1
,4
]}

Lecouvreur, Paul ^{[1
]}

Pouliquen, Sylvain ^{[1
,5
]}

机构：

[1] PROMES CNRS, UPR 8521, Tecnosud, Rambla Thermodynam, F-66100 Perpignan, France

[2] Univ Lisbon, Fac Ciencias, Inst Dom Luiz, Campo Grande Ed C8, P-1749016 Lisbon, Portugal

[3] Univ Pau & Pays Adour, SIAME, Batiment Sci,BP 1155, F-64013 Pau, France

[4] Univ Laval, Ctr Rech Mat Avances, Lab Ingn Surface, Dept Genie Mines Met & Mat, 1065 Ave Med, Quebec City, PQ G1V 0A6, Canada

[5] Ctr Rech Paris Saclay, Air Liquide, 1 Chemin Bas Plante Roches, F-78354 Les Ioges En Josas, France

来源：

PLASMA PROCESSES AND POLYMERS | 2016年 / 13卷 / 01期

关键词：

antireflective and passivation coating; atmospheric pressure discharges; dielectric barrier discharge (DBD); silicon nitride; solar cells; SOLAR-CELL; THIN-FILMS; PASSIVATION; SURFACE; PECVD;

D O I：

10.1002/ppap.201500182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dense hydrogenated silicon nitride (SiNx:H) layers for photovoltaics are made by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD). The dependence of morphology, chemical, optical and passivation properties of the thin films on the plasma reactor configuration, the mode of homogeneous DBD (glow, Townsend, RF, nano pulsed) and the SiH4/NH3 gas flow ratio are investigated. Avoiding gas recirculation, improving thin film homogeneity through the electrode length and the plasma modulation appear as key points. Silicon solar cells made with AP-PECVD SiN antireflective coating have the same efficiency as standard low pressure PECVD cells, showing the great potential of AP-PECVD.

引用

页码：170 / 183

页数：14

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