Analyses of self-assembled GaN nanorods on Si (111) substrate

被引：0

作者：

Tu, LW ^{[1
]}

Hsiao, CL

Chi, TW

Wu, JF

Lo, I

Hsieh, KY

Sheng, TT

Hu, CF

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan

[2] Natl Sun Yat Sen Univ, Inst Mat Sci & Engn, Kaohsiung 80424, Taiwan

[3] Macronix Int Co Ltd, Hsinchu 30055, Taiwan

来源：

COMPOUND SEMICONDUCTORS 2002 | 2003年 / 174卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the techniques of molecular beam epitaxy and self-assembly, GaN pillars with a dimension of nanoscale are demonstrated. No catalysis or extra nanostructure are used. These nanorods are hexagonal phase GaN and grow in a vertical direction to the substrate along the c-axis. Analyses are done with scanning electron microscopy, transmission electron microscopy, x-ray diffraction, photoluminescence, and micro-Raman spectroscopy.

引用

页码：179 / 182

页数：4

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