High Performance Self-Aligned Top-Gate Amorphous Indium Zinc Oxide Thin-Film Transistors

We clear the persistent inferiority, innovating the device performaces of a-IZO TFT by adopting self-aligned coplanar top-gate structure and modifying the surface of a-IZO material. Herein, we demonstrate a high performance simple-processed a-IZO TFT with the mobility of similar to 116 cm(2)V(-1)s(-1), SS of similar to 190 mV dec(-1), and good bias stability. The mobility value is regarded to be the most superior among previously reported ones of AOS TFTs, to the best of our limited knowledge.