Non-isolated DC-DC converter with a high-voltage conversion ratio

被引:18
作者
Shayeghi, Hossein [1 ]
Pourjafar, Saeed [1 ]
Maalandish, Mohammad [2 ]
Nouri, Soheil [3 ]
机构
[1] Univ Mohaghegh Ardabili, Dept Elect Engn, Ardebil, Iran
[2] Univ Tabriz, Fac Elect & Comp Engn, Tabriz, Iran
[3] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
关键词
switching convertors; DC-DC power convertors; zero voltage switching; zero current switching; power MOSFET; clamp circuit; suggested converter; power metal-oxide-semiconductor field-effect transistor; ON-state resistance; simple control circuit; high-voltage conversion ratio; novel nonisolated boost DC-DC converter; high-voltage gain; voltage lift circuit; peak voltage; active switch; power; 200; 0; W; frequency; 25; kHz; DC/DC CONVERTER; INPUT CURRENT; GAIN; CAPABILITY;
D O I
10.1049/iet-pel.2019.1014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This work introduces a novel non-isolated boost DC-DC converter with high-voltage gain and high efficiency. The magnetic coupling and voltage lift circuit technique has been utilised to enhance the voltage conversion ratio. In order to decrease the peak voltage across the active switch, the voltage lift circuit acts as a clamp circuit. The zero current switching in the OFF-state and the zero voltage switching in the ON-state of diodes are other advantages of the suggested converter which leads to approach high efficiency by decreasing the conduction losses. In addition, only one power metal-oxide-semiconductor field-effect transistor with lower ON-state resistance is employed, which can provide the simple control circuit of the proposed topology. For demonstrating the performance of the proposed structure, the principle of operation modes and comparison results with other previous works is carried out. Finally, experimental results with a 200 W power level at 25 kHz operating frequency are prepared, which validate the usefulness of the proposed converter.
引用
收藏
页码:3797 / 3806
页数:10
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