Improved Electrical Characteristics of Amorphous Oxide TFTs Based on TiOx Channel Layer Grown by Low-Temperature MOCVD

被引：24

作者：

Park, Jae-Woo ^{[1
]}

Han, Sung-Won ^{[2
]}

Jeon, Narnho ^{[1
]}

Jang, Jinhyuk ^{[1
]}

Yoo, Seunghyup ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea

[2] Techno Semichem Co Ltd, Kong Ju 72515, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 12期

关键词：

Metal-organic chemical vapor deposition (MOCVD); thin-film transistor (TFT); titanium oxide (TiOx); transparent TFTs;

D O I：

10.1109/LED.2008.2005737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the fabrication of n-type thin-film transistors (TFTs) based on TiOx channels grown by the metal-organic chemical vapor deposition method with the chamber temperature of 250 degrees C. These TFTs exhibit ideal characteristics with the flat saturation, low subthreshold swing, and narrow hysteresis window, all of which are a clear improvement from our previous work based on TiO2 nanoparticles. The TiOx film in this letter is identified to be in the amorphous phase from X-ray diffraction analysis, and its carrier density is estimated to be 2.6 x 10(17) cm(-3) from the transmission line model and analysis of TFT on-resistance measured at various gate biases and channel lengths.

引用

页码：1319 / 1321

页数：3

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