Ni spin switching induced by magnetic frustration in FeMn/Ni/Cu(001)

被引:22
作者
Wu, J. [1 ]
Choi, J. [1 ]
Scholl, A. [2 ]
Doran, A. [2 ]
Arenholz, E. [2 ]
Hwang, Chanyong [3 ]
Qiu, Z. Q. [1 ]
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[3] Korea Res Inst Stand & Sci, Adv Technol Div, Taejon 305340, South Korea
基金
美国国家科学基金会;
关键词
copper; ferromagnetic materials; frustration; iron alloys; Kerr magneto-optical effect; magnetic anisotropy; magnetic epitaxial layers; magnetic multilayers; magnetic switching; manganese alloys; nickel; paramagnetic-antiferromagnetic transitions; photoelectron microscopy; ELECTRICAL CONTROL; FE FILMS; ANISOTROPY; MULTILAYERS; INPLANE; DOMAINS;
D O I
10.1103/PhysRevB.79.212411
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
FeMn/Ni/Cu(001) bilayer films are grown epitaxially and investigated by photoemission electron microscopy and magneto-optic Kerr effect. We find that as the FeMn overlayer changes from paramagnetic to antiferromagnetic state, it switches the ferromagnetic Ni spin direction from the out-of-plane to an in-plane direction of the film. This phenomenon reveals the mechanism of creating magnetic anisotropy by the out-of-plane spin frustration at the FeMn-Ni interface.
引用
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页数:4
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