Monte Carlo simulation of high-order harmonies generation in bulk semiconductors and submicron structures

被引：7

作者：

Adorno, DP ^{[1
]}

Zarcone, M ^{[1
]}

Ferrante, G ^{[1
]}

Shiktorov, P ^{[1
]}

Starikov, E ^{[1
]}

Grozinskis, V ^{[1
]}

Pérez, S ^{[1
]}

González, T ^{[1
]}

Reggiani, L ^{[1
]}

Varani, L ^{[1
]}

Vaissière, JC ^{[1
]}

机构：

[1] Univ Palermo, Dipartimento Fis & Tecnnol Relat, I-90128 Palermo, Italy

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 1, NO 6 | 2004年 / 1卷 / 06期

关键词：

D O I：

10.1002/pssc.200304070

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

To qualify the feasibility of standard semiconductor materials and Schottky- barrier diodes (SBDs) for THz high-order harmonic generation and extraction, the harmonic intensity, intrinsic noise and signal-to-noise ratio are calculated by the Monte Carlo method when a periodic high-frequency large-amplitude external signal is applied to a semiconductor device. Due to very high signal-to-noise ratio heavily doped GaAs SBDs are found to exhibit conditions for frequency mixing and harmonic extraction that are definitively superior to those of bulk materials. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1367 / 1376

页数：10

共 20 条

[1]

Adorno DP, 2000, LASER PHYS, V10, P310

[2]

Adorno DP, 2001, LASER PHYS, V11, P291

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