Solar-blind AlGaN photodiodes with very low cutoff wavelength

被引：171

作者：

Walker, D ^{[1
]}

Kumar, V ^{[1
]}

Mi, K ^{[1
]}

Sandvik, P ^{[1
]}

Kung, P ^{[1
]}

Zhang, XH ^{[1
]}

Razeghi, M ^{[1
]}

机构：

[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 04期

关键词：

D O I：

10.1063/1.125768

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the fabrication and characterization of AlxGa1-xN photodiodes (x similar to 0.70) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The peak responsivity for -5 V bias is 0.11 A/W at 232 nm, corresponding to an internal quantum efficiency greater than 90%. The device response drops four orders of magnitude by 275 nm and remains at low response for the entire near-ultraviolet and visible spectrum. Improvements were made to the device design including a semitransparent Ni/Au contact layer and a GaN:Mg cap layer, which dramatically increased device response by enhancing the carrier collection efficiency. (C) 2000 American Institute of Physics. [S0003-6951(00)01204-3].

引用

页码：403 / 405

页数：3

共 10 条

[1]

KRISHNANKUTTY S, 1998, MRS INT J, V3

[2] GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio [J].

Kung, P ;

Zhang, XL ;

Walker, D ;

Saxler, A ;

Razeghi, M .

PHOTODETECTORS: MATERIALS AND DEVICES III, 1998, 3287 :214-220

[3] High-performance GaN p-n junction photodetectors for solar ultraviolet applications [J].

Monroy, E ;

Munoz, E ;

Sanchez, FJ ;

Calle, F ;

Calleja, E ;

Beaumont, B ;

Gibart, P ;

Munoz, JA ;

Cusso, F .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) :1042-1046

[4] Low noise p-pi-n GaN ultraviolet photodetectors [J].

Osinsky, A ;

Gangopadhyay, S ;

Gaska, R ;

Williams, B ;

Khan, MA ;

Kuksenkov, D ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1997, 71 (16) :2334-2336

[5] Semiconductor ultraviolet detectors [J].

Razeghi, M ;

Rogalski, A .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) :7433-7473

[6] Solar blind UV region and UV detector development objectives [J].

Schreiber, P ;

Dang, T ;

Pickenpaugh, T ;

Smith, G ;

Gehred, P ;

Litton, C .

PHOTODETECTORS: MATERIALS AND DEVICES IV, 1999, 3629 :230-248

[7]

ULMER MP, 1995, P SOC PHOTO-OPT INS, V2397, P210, DOI 10.1117/12.206870

[8] Visible blind GaN p-i-n photodiodes [J].

Walker, D ;

Saxler, A ;

Kung, P ;

Zhang, X ;

Hamilton, M ;

Diaz, J ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 1998, 72 (25) :3303-3305

[9] High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN [J].

Walker, D ;

Monroy, E ;

Kung, P ;

Wu, J ;

Hamilton, M ;

Sanchez, FJ ;

Diaz, J ;

Razeghi, M .

APPLIED PHYSICS LETTERS, 1999, 74 (05) :762-764

[10] GROWTH OF ALXGA1-XN-GE ON SAPPHIRE AND SILICON SUBSTRATES [J].

ZHANG, X ;

KUNG, P ;

SAXLER, A ;

WALKER, D ;

WANG, TC ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1995, 67 (12) :1745-1747

← 1 →