Characterization of thermal properties of Cd1-x-yZnxMgySe mixed crystals by means of photopyroelectric and infrared imaging techniques

被引：15

作者：

Strzalkowski, K. ^{[1
]}

机构：

[1] Nicholas Copernicus Univ, Inst Phys, Fac Phys Astron & Informat, PL-87100 Torun, Poland

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2014年 / 184卷

关键词：

AII-BVI semiconductors; Cd1-x-yZnxMgySe crystals; Lock-in thermography; PPE method; Thermal properties; INP; SEMICONDUCTORS;

D O I：

10.1016/j.mseb.2014.01.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work a complete thermal characterization of Cd1-x-yZnxMgySe mixed crystals was carried out. Bulk Cd1-x-yZnxMgySe semiconductors with different x and y contents were grown from the melt by the modified high pressure Bridgman method. The photopyroelectric (PPE) method in the back configuration (BPPE) and the infrared (IR) lock-in thermography were applied to measure the thermal diffusivity. Values of thermal effusivity of the samples were obtained with the PPE technique in the front configuration (FPPE), coupled with a thickness thermal wave resonator cavity (TWRC) scanning procedure. Measured thermal effusivity together with the thermal diffusivity allowed calculating the thermal conductivity of the investigated materials. For the calculation of the specific heat, the densities of the samples were calculated from their weight and geometry. The effect of Mg/Zn molar ratio on thermal properties of these quaternary Cd1-x-yZnxMgySe compounds was analyzed and discussed. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：80 / 87

页数：8

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