Effects of nitrogen incorporation into lanthana film by plasma immersion ion implantation

被引：2

作者：

Sen, Banani ^{[1
]}

Wong, Hei ^{[1
]}

Yang, B. L. ^{[1
]}

Chu, P. K. ^{[2
]}

Kakushima, K. ^{[3
]}

Iwai, H. ^{[3
]}

机构：

[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

[3] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

SOLID-STATE ELECTRONICS | 2009年 / 53卷 / 03期

关键词：

Lanthanum oxide; Nitrogen; Plasma immersion ion implantation; Oxide traps; GATE DIELECTRICS; HAFNIUM OXIDE; DEPOSITION; STABILITY;

D O I：

10.1016/j.sse.2009.01.009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the effect of nitrogen implantation on thin La2O3 films grown by e-beam evaporation are investigated using x-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and capacitance-voltage (C-V) measurements. The amount of nitrogen incorporation in the oxide film by plasma immersion ion-implantation (PIII) is found to be quite low (about 3% near the surface). However, introduction of nitrogen atoms into La2O3 network results in a significant reduction in the oxide traps and leads to a notable improvement in both material and electrical properties of the dielectric. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：355 / 358

页数：4

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