The photoconductance of a single CdS nanoribbon

Photoconductance of a single CdS nanoribbon was measured under an incandescent light illumination and 512 nm light illumination by using indium tin oxide (ITO) as electrodes. The CdS powders was placed in the middle of zones II, while the silicon substrates coated with gold film were placed in the middle of zones II. The temperatures at the center of the three zones were increased within 30 min to 700, 880, and 400 °C, respectively, and held at these temperatures for 2 hours. Samples collected from the silicon substrates were characterized by scanning electron microscopy, and high-resolution transmission electron microscopy. It was found that the photo-to-dark conductance ratios of a single CdS nanoribbon were 105 and 10 7 under incandescent light illumination and 512 nm light irradiation. The high photoconductance, the short rise time and decay time proved very important for CdS nanoribbon used in the field of optoelectron and other fields.