Memory Window and Endurance Improvement of Hf0.5Zr0.5O2-Based FeFETs with ZrO2 Seed Layers Characterized by Fast Voltage Pulse Measurements

被引：77

作者：

Xiao, Wenwu ^{[1
]}

Liu, Chen ^{[1
]}

Peng, Yue ^{[2
]}

Zheng, Shuaizhi ^{[1
]}

Feng, Qian ^{[2
]}

Zhang, Chunfu ^{[2
]}

Zhang, Jincheng ^{[2
]}

Hao, Yue ^{[2
]}

Liao, Min ^{[1
]}

Zhou, Yichun ^{[1
]}

机构：

[1] Xiangtan Univ, Sch Mat Sci & Engn, Minist Educ, Key Lab Low Dimens Mat & Applicat Technol, Xiangtan 411105, Peoples R China

[2] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2019年 / 14卷 / 1期

基金：

中国国家自然科学基金;

关键词：

HfO2-based FeFET; Memory window; Retention; Endurance; ZrO2 seed layer; NEGATIVE CAPACITANCE; FILMS; MOSFET;

D O I：

10.1186/s11671-019-3063-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The HfO2-based ferroelectric field effect transistor (FeFET) with a metal/ferroelectric/insulator/semiconductor (MFIS) gate stack is currently being considered as a possible candidate for high-density and fast write speed non-volatile memory. Although the retention performance of the HfO2-based FeFET with a MFIS gate stack could satisfy the requirements for practical applications, its memory window (MW) and reliability with respect to endurance should be further improved. This work investigates the advantage of employing ZrO2 seed layers on the MW, retention, and endurance of the Hf0.5Zr0.5O2 (HZO)-based FeFETs with MFIS gate stacks, by using fast voltage pulse measurements. It is found that the HZO-based FeFET with a ZrO2 seed layer shows a larger initial and 10-year extrapolated MW, as well as improved endurance performance compared with the HZO-based FeFET without the ZrO2 seed layer. The results indicate that employing of a direct crystalline high-k/Si gate stack would further improve the MW and reliability of the HfO2-based FeFETs.

引用

页数：7

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