Recent advances in ultraviolet photodetectors

被引：348

作者：

Alaie, Z. ^{[1
]}

Nejad, S. Mohammad ^{[1
]}

Yousefi, M. H. ^{[2
]}

机构：

[1] Iran Univ Sci & Technol, Nanoptron Res Ctr, Tehran, Iran

[2] Malke Ashtar Univ Technol, Nanolab, Esfahan, Iran

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 29卷

关键词：

Ultraviolet photodetection; Semiconductors; Nanoparticles; Thin film; SEMICONDUCTOR-METAL PHOTODETECTORS; SCHOTTKY-BARRIER PHOTODETECTORS; GAN MSM PHOTODETECTORS; P-TYPE GAN; UV PHOTODETECTORS; ELECTRICAL-PROPERTIES; SPECTRAL RESPONSE; PHOTOCONDUCTIVE DETECTOR; AVALANCHE PHOTODIODES; ALGAN PHOTODETECTORS;

D O I：

10.1016/j.mssp.2014.02.054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In recent years, ultraviolet (UV) photodetectors (PDs) have received much attention in the various field of research due to wide range of industrial, military, biological and environmental applications. In this paper, a special focus is given to the unique advantages of different UV PDs, current device schemes and demonstrations, novel structures and new material compounds which are used to fabrication of PDs. Additionally, we investigate numerous technical design challenges and compare characteristics of the various PD structures developed to date. Finally, we conclude this review paper with some future research directions in this field. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：16 / 55

页数：40

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