Double-Exposure Grayscale Photolithography

被引:37
|
作者
Mosher, Lance [1 ]
Waits, Christopher M. [2 ]
Morgan, Brian [2 ]
Ghodssi, Reza [3 ]
机构
[1] Lockheed Martin Space Syst Co, Newtown, PA 19104 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
[3] Univ Maryland, Syst Res Inst, Dept Elect & Comp Engn, MEMS Sensors & Actuators Lab, College Pk, MD 20742 USA
关键词
Grayscale lithography; microelectromechanical systems (MEMS); micromachining; three-dimensional (3-D) lithography; GRAY-SCALE LITHOGRAPHY; FABRICATION; BEAM; MICROFABRICATION; SU-8;
D O I
10.1109/JMEMS.2008.2011703
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A double-exposure grayscale photolithography technique is developed and demonstrated to produce three-dimensional (3-D) structures with a high vertical resolution. Pixelated grayscale masks often suffer from limited vertical resolution due to restrictions on the mask fabrication. The double-exposure technique uses two pixelated grayscale mask exposures before development and dramatically increases the vertical resolution without altering the mask fabrication process. An empirical calibration technique was employed for mask design and was also applied to study the effects of exposure time and mask misalignment on the photoresist profile. This technology has been demonstrated to improve the average step between photoresist levels from 0.19 to 0.02 mu m and the maximum step from 0.43 to 0.2 mu m compared to a single pixelated exposure using the same mask design.
引用
收藏
页码:308 / 315
页数:8
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