A study of deep energy-level traps at the 4H-SiC/SiO2 interface and their passivation by hydrogen

被引：10

作者：

Allerstam, F. ^{[1
]}

Sveinbjornsson, E. O. ^{[1
]}

机构：

[1] Chalmers, Microwave Elect Lab, SE-41296 Gothenburg, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷

关键词：

MOS; hydrogen passivation; interface states; DLTS; STATE DENSITY; TEMPERATURE; REDUCTION;

D O I：

10.4028/www.scientific.net/MSF.600-603.755

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This study is focused on characterization of deep energy-level interface traps formed during sodium enhanced oxidation of n-type Si face 4H-SiC. The traps are located 0.9 eV below the SiC conduction band edge as revealed by deep level transient spectroscopy. Furthermore these traps are passivated using post-metallization anneal at 400 degrees C in forming gas ambient.

引用

页码：755 / 758

页数：4

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