Self-Sterilized Flexible Single-Electrode Triboelectric Nanogenerator for Energy Harvesting and Dynamic Force Sensing

被引:159
作者
Guo, Huijuan [1 ]
Li, Tao [1 ]
Cao, Xiaotao [1 ]
Xiong, Jin [2 ]
Jie, Yang [1 ,3 ]
Willander, Magnus [1 ]
Cao, Xia [1 ,3 ]
Wang, Ning [4 ]
Wang, Zhong Lin [1 ,5 ]
机构
[1] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Natl Ctr Nanosci & Technol NCNST, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Inst Proc Engn, Beijing 100190, Peoples R China
[3] Univ Sci & Technol Beijing, Res Ctr Bioengn & Sensing Technol, Beijing 100083, Peoples R China
[4] Univ Sci & Technol Beijing, Sch Math & Phys, Ctr Green Innovat, Beijing 100083, Peoples R China
[5] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
基金
中国国家自然科学基金;
关键词
triboelectric nanogenerator; graphene oxide; wearable electronics; dynamic force response; sterilizing effect; GRAPHENE OXIDE; SENSOR; GENERATION; EFFICIENCY; CONVERSION; NANOSHEETS; REDUCTION; STORAGE; SYSTEM; FILMS;
D O I
10.1021/acsnano.6b07389
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Triboelectric nanogenerators (TENGs) offer great opportunities to deploy advanced wearable electronics that integrate a power generator and smart sensor, which eliminates the associated cost and sustainability concerns. Here, an embodiment of such integrated platforms has been presented in a graphene oxide (GO) based single-electrode TENG (S-TENG). The as-designed multifunctional device could not only harvest tiny bits of mechanical energy from ambient movements with a high power density of 3.13 W.m(-2) but also enable detecting dynamic force with an excellent sensitivity of about 388 mu A.MPa-1. Because of the two-dimensional nanostructure and excellent surface properties, the GO-based S-TENG shows sensitive force detection and sound antimicrobial activity in comparison with conventional poly(tetrafluoroethylene) (PTFE) electrodes. This technology offers great applicability prospects in portable/wearable electronics, micro/nanoelectromechanical devices, and self powered sensors.
引用
收藏
页码:856 / 864
页数:9
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