Surface State-Dominated Photoconduction and THz Generation in Topological Bi2Te2Se Nanowires

被引:49
作者
Seifert, Paul [1 ,2 ]
Valdinova, Kristina [3 ]
Kern, Klaus [3 ,4 ]
Burghard, Marko [3 ]
Holleitner, Alexander [1 ,2 ]
机构
[1] Tech Univ Munich, Walter Schottky Inst, Coulombwall 4a, D-85748 Garching, Germany
[2] Tech Univ Munich, Dept Phys, Coulombwall 4a, D-85748 Garching, Germany
[3] Max Planck Inst Festkorperforsch, Heisenbergstr 1, D-70569 Stuttgart, Germany
[4] Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland
关键词
Topological insulators; stuface state dynamics; ultrafast photodetector; on-chip THz generation; SEMICONDUCTOR SURFACES; OPTICAL RECTIFICATION; TERAHERTZ EMISSION; INSULATOR; PHOTOCURRENTS; TRANSMISSION; RADIATION; TRANSPORT; CURRENTS; INAS;
D O I
10.1021/acs.nanolett.6b04312
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Topological insulators constitute a fascinating class of quantum materials with nontrivial, gapless states on the surface and insulating bulk states. By revealing the optoelectronic dynamics in the whole range from femto- to microseconds, we demonstrate that the long surface lifetime of Bi2Te2Se nanowires allows us to access the surface states by a pulsed photoconduction scheme and that there is a prevailing bolometric response of the surface states. The interplay of the surface and bulk states dynamics on the different time scales gives rise to a surprising physical property of Bi2Te2Se nanowires: their pulsed photoconductance changes polarity as a function of laser power. Moreover, we show that single Bi2Te2Se nanowires can be used as THz generators for on-chip high-frequency circuits at room temperature. Our results open the avenue for single Bi2Te2Se nano wires as active modules in optoelectronic high-frequency and THz circuits.
引用
收藏
页码:973 / 979
页数:7
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