Benign Solutions and Innovative Sequential Annealing Processes for High Performance Cu 2 ZnSn( Se, S) 4 Photovoltaics

被引：57

作者：

Hsu, Chia-Jung ^{[1
,2
]}

Duan, Hsin-Sheng ^{[1
,2
]}

Yang, Wenbing ^{[1
,2
]}

Zhou, Huanping ^{[1
,2
]}

Yang, Yang ^{[1
,2
]}

机构：

[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[2] Calif NanoSyst Inst, Los Angeles, CA 90095 USA

来源：

ADVANCED ENERGY MATERIALS | 2014年 / 4卷 / 06期

关键词：

earth-abundant materials; kesterites; photovoltaic devices; solution processing; FILM SOLAR-CELLS; BACK CONTACT; EFFICIENCY; SEMICONDUCTORS;

D O I：

10.1002/aenm.201301287

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Solution-based earth-abundant Cu2ZnSn(Se,S)(4) (CZTSSe) is proven to be a promising tool for thin-film photovoltaic fabrication. Combining fully dissolved copper (Cu) and zinc/tin (Zn/Sn) hydrazinium constituents in an ethanolamine (EA) and dimethylsulfoxide (DMSO) solution mixture forms the CZTS precursor. All solutes in the precursor solution are intermixed on the molecular scale with excellent homogeneity. Sequential annealing steps under chalcogen vapor allow for enhanced grain growth while preventing the back contact from forming an excessively thick Mo(S,Se)(2) layer. The resulting devices achieve power conversion efficiencies of 7.5% under 1 sun conditions.

引用

页数：7

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