Optically induced charging effects in self-assembled GaSb/GaAs quantum dots -: art. no. 081302

被引：21

作者：

Hayne, M

Razinkova, O

Bersier, S

Heitz, R

Müller-Kirsch, L

Geller, M

Bimberg, D

Moshchalkov, VV

机构：

[1] Katholieke Univ Leuven, Lab Solid State Phys & Magnetism, Pulsed Field Grp, B-3001 Louvain, Belgium

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] Katholieke Univ Leuven, Lab Solid State Phys & Magnetism, Nanoscale Superconduct & Magnetism Grp, B-3001 Louvain, Belgium

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.70.081302

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report photoluminescence (PL) measurements on self-assembled GaSb/GaAs quantum dots. As the laser excitation is increased from very low levels, the PL shows a strong red shift, and then a blue shift, such that it presents a U-shaped curve. Raising the temperature causes a large (<100 meV) blue shift of the PL, and shifts the minimum of the PL energy versus laser excitation curve to higher laser powers. Applying a magnetic field at lasers powers much less than1 W cm(-2) red shifts the PL energy. We explain these effects by population or depopulation of dots that are filled in the dark with holes supplied by carbon acceptors.

引用

页码：081302 / 1

页数：4

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