Unfolding the band structure of disordered solids: From bound states to high-mobility Kane fermions

被引:81
作者
Rubel, O. [1 ,2 ]
Bokhanchuk, A. [1 ]
Ahmed, S. J. [3 ]
Assmann, E. [4 ]
机构
[1] Thunder Bay Reg Res Inst, Thunder Bay, ON P7B 6V4, Canada
[2] Lakehead Univ, Dept Phys, Thunder Bay, ON P7B 5E1, Canada
[3] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L8, Canada
[4] Vienna Univ Technol, Inst Solid State Phys, A-1040 Vienna, Austria
来源
PHYSICAL REVIEW B | 2014年 / 90卷 / 11期
基金
加拿大自然科学与工程研究理事会;
关键词
ELECTRON-MOBILITY; ALLOYS; HGCDTE; GAP; SEMICONDUCTORS; REPRESENTATION; APPROXIMATION; GAINNAS;
D O I
10.1103/PhysRevB.90.115202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Supercells are often used in ab initio calculations to model compound alloys, surfaces, and defects. One of the main challenges of supercell electronic structure calculations is to recover the Bloch character of electronic eigenstates perturbed by disorder. Here we apply the spectral weight approach to unfolding the electronic structure of group III-V and II-VI semiconductor solid solutions. The illustrative examples include formation of donorlike states in dilute Ga(PN) and associated enhancement of its optical activity, direct observation of the valence band anticrossing in dilute GaAs:Bi, and a topological band crossover in ternary (HgCd)Te alloy accompanied by emergence of high-mobility Kane fermions. The analysis facilitates interpretation of optical and transport characteristics of alloys that are otherwise ambiguous in traditional first-principles supercell calculations.
引用
收藏
页数:8
相关论文
共 53 条
[1]  
Adachi S., 1999, Optical Constants of Crystalline and Amorphous Semiconductors
[2]   Valence band anticrossing in GaBixAs1-x [J].
Alberi, K. ;
Dubon, O. D. ;
Walukiewicz, W. ;
Yu, K. M. ;
Bertulis, K. ;
Krotkus, A. .
APPLIED PHYSICS LETTERS, 2007, 91 (05)
[3]   Recovering hidden Bloch character: Unfolding electrons, phonons, and slabs [J].
Allen, P. B. ;
Berlijn, T. ;
Casavant, D. A. ;
Soler, J. M. .
PHYSICAL REVIEW B, 2013, 87 (08)
[4]   PHONON DISPERSIONS IN GAXAL1-XAS ALLOYS [J].
BARONI, S ;
DEGIRONCOLI, S ;
GIANNOZZI, P .
PHYSICAL REVIEW LETTERS, 1990, 65 (01) :84-87
[5]  
Batool Z, 2013, MOLECULAR BEAM EPITAXY: FROM RESEARCH TO MASS PRODUCTION, P139, DOI 10.1016/B978-0-12-387839-7.00007-5
[6]   Doping effects of Se vacancies in monolayer FeSe [J].
Berlijn, Tom ;
Cheng, Hai-Ping ;
Hirschfeld, P. J. ;
Ku, Wei .
PHYSICAL REVIEW B, 2014, 89 (02)
[7]   Effective Doping and Suppression of Fermi Surface Reconstruction via Fe Vacancy Disorder in KxFe2-ySe2 [J].
Berlijn, Tom ;
Hirschfeld, P. J. ;
Ku, Wei .
PHYSICAL REVIEW LETTERS, 2012, 109 (14)
[8]   Do Transition-Metal Substitutions Dope Carriers in Iron-Based Superconductors? [J].
Berlijn, Tom ;
Lin, Chia-Hui ;
Garber, William ;
Ku, Wei .
PHYSICAL REVIEW LETTERS, 2012, 108 (20)
[9]   Can Disorder Alone Destroy the e′g Hole Pockets of NaxCoO2? A Wannier Function Based First-Principles Method for Disordered Systems [J].
Berlijn, Tom ;
Volja, Dmitri ;
Ku, Wei .
PHYSICAL REVIEW LETTERS, 2011, 106 (07)
[10]  
Blaha P., 2001, CALCULATING CRYST PR, V60