Characterization of ferroelectric and piezoelectric properties of lead titanate thin films deposited on Si by sputtering

被引：27

作者：

Jaber, B

Remiens, D

Cattan, E

Tronc, P

Thierry, B

机构：

[1] Lab. des Mat. Avances Ceramiques, CRITT 'Céramiques Fines', Univ. Valenciennes Hainaut Cambresis, F-59600 Maubeuge, ZI champ de l'Abbesse

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1997年 / 63卷 / 02期

关键词：

ceramics; ferroelectric properties; lead titanate; piezoelectric properties; silicon;

D O I：

10.1016/S0924-4247(97)01530-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lead titanate thin films have been formed on Si(100)/SiO2/Ti/Pt substrates by sputtering followed by a post-deposition annealing. Pure perovskite phase is obtained at a temperature compatible with silicon technology; the films are dense without porosity. The ferroelectric and piezoelectric properties of the films have been determined. The embedded beam method is used to measure the piezoelectric response. The effect of poling on the piezoelectric properties is evaluated. The results show that this thin-film material has promise for use in actuation, in particular, to integrate PbTiO3 films into ambitious silicon micromachining schemes. (C) 1997 Elsevier Science S.A.

引用

页码：91 / 96

页数：6

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