Synthesis, Characterization and Wettability of Cu-Sn Alloy on the Si-Implanted 6H-SiC

The wettability of the metal/SiC system is not always excellent, resulting in the limitation of the widespread use of SiC ceramic. In this paper, three implantation doses of Si ions (5 x 10(15), 1 x 10(16), 5 x 10(16)ions/cm(2)) were implanted into the 6H-SiC substrate. The wetting of Cu-(2.5, 5, 7.5, 10) Sn alloys on the pristine and Si-SiC were studied by the sessile drop technique, and the interfacial chemical reaction of Cu-Sn/SiC wetting couples was investigated and discussed. The Si ion can markedly enhance the wetting of Cu-Sn on 6H-SiC substrate, and those of the corresponding contact angles (theta) are raised partly, with the Si ion dose increasing due to the weakening interfacial chemical reactions among four Cu-Sn alloys and 6H-SiC ceramics. Moreover, the theta of Cu-Sn on (Si-)SiC substrate is first decreased and then increased from similar to 62 degrees to similar to 39 degrees, and similar to 70 degrees and similar to 140 degrees, with the Sn concentration increasing from 2.5%, 5% and 7.5% to 10%, which is linked to the reactivity of Cu-Sn alloys and SiC ceramic and the variation of liquid-vapor surface energy. Particularly, only a continuous graphite layer is formed at the interface of the Cu-10Sn/Si-SiC system, resulting in a higher contact angle (>40 degrees).