Modeling and simulation of AlN bulk sublimation growth systems

被引：24

作者：

Wu, B

Ma, RH

Zhang, H ^{[1
]}

Prasad, V

机构：

[1] SUNY Stony Brook, Dept Mech Engn, Stony Brook, NY 11794 USA

[2] Florida Int Univ, Coll Engn, Miami, FL 33174 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 266卷 / 1-3期

关键词：

computer simulation; growth models; growth from vapor; single crystal growth; chemical vapor deposition processes; nitrides;

D O I：

10.1016/j.jcrysgro.2004.02.059

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper, we have developed a numerical model to simulate two AIN sublimation growth systems. Temperature distributions in the growth cell for resistance and induction heating systems are presented and compared. The growth rate has been predicted and compared with experimental data. An anisotropic thermomechanical stress model is also developed to predict the thermal stress distribution in the as-grown crystal, with or without contact with the crucible wall. (C) 2004 Elsevier B.V. All rights reserved.

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页码：303 / 312

页数：10

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