Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO

被引：59

作者：

Shah, Lubna R. ^{[1
]}

Zhu, Hao ^{[1
]}

Wang, W. G. ^{[1
]}

Ali, Bakhtyar ^{[4
]}

Zhu, Tao ^{[2
]}

Fan, Xin ^{[1
]}

Song, Y. Q. ^{[3
]}

Wen, Q. Y. ^{[3
]}

Zhang, H. W. ^{[3
]}

Shah, S. Ismat ^{[1
,4
]}

Xiao, John Q. ^{[1
]}

机构：

[1] Univ Delaware, Dept Phys & Astron, Newark, DE 19711 USA

[2] Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China

[3] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China

[4] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 03期

基金：

美国国家科学基金会;

关键词：

ROOM-TEMPERATURE FERROMAGNETISM; THIN-FILMS; MATERIALS DESIGN; SEMICONDUCTORS; MN; EXCHANGE; ZINC;

D O I：

10.1088/0022-3727/43/3/035002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co-ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zni). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zn(i) layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.

引用

页数：8

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