The semiconductor laser: A thirty-five-year perspective

被引:13
作者
Holonyak, N [1 ]
机构
[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECT,URBANA,IL 61801
基金
美国国家科学基金会;
关键词
Al-bearing III-V oxide; carrier injection; direct-gap recombination; energy-gap engineering; impurity-induced layer disordering; laser; light emitting diode; liquid-phase epitaxy; optoelectronics; oxide-defined laser; p-n junction lamp; quantum-well heterostructures; quantum-well lasers; recombination radiation; semiconductor lasers; stimulated emission in III-V semiconductors; superlattices; III-V alloy III-V heterojunctions; 2-D; 1-D; 0-D quantum wells; vapor-phase epitaxy; vertical-cavity laser; wet oxidation;
D O I
10.1109/5.649645
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Starting in 1962 with GaAs and the alloy GaAsP, the prototype III-V alloy, the semiconductor laser developed slowly from a pulse-operated simple p-n junction to a continuously operated (300-K) double hererojunction in 1970. Then, in 1977, in another metamorphosis, it became a quantum-well (QW) device of reduced dimensionality (two dimensional) and improved density of states and performance. The fact that the semiconductor laser is based on an ideal form of ''lamp,'' a p-n junction of potentially 100% quantum efficiency in conversion of electron-hole pairs to photons, gives it a built-in advantage over all other forms of lasers-all the indirectly excited lasers. Also, being a condensed system, it can be small-smaller than all other forms of lasers-and yet cover a great wavelength and power range which continue to expand. Because of its thin-layer form, a eW heterostructure (the product of more or less easily controlled epitaxial crystal growth) is amenable to modification by relatively simple processing operations such as impurity-induced layer disordering and now ''wet'' oxidation of Al-based layers, which makes possible a new generation of high-performance vertical-cavity surface emitting lasers (VCSEL's). The VCSEL, with its oxide-defined high-Q flat cavity, reduced mode density, and approach now to instant ''turn-on'' (mu A currents), indicates that semiconductor lasers may not become much better than VCSEL's, even if there is a change (not certain) in form from two to one to zero dimensional (and, if so, to problems in uniformity and reproducibility). If the technologies of the high-brightness transparent-substrate light emitting diode (LED) and the VCSEL converge much more, it is likely that the VCSEL-LED will become an addressable array (a display), a projection television or a low-or high-power lamp, perhaps eventually on a large ''diameter'' Si platform. The study of the semiconductor laser, the first practical QW device, is not complete, nor is its development which is certain to continue.
引用
收藏
页码:1678 / 1693
页数:16
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