Line widths of single-electron tunneling oscillations: Experiment and numerical simulations

被引:0
|
作者
Bylander, Jonas [1 ]
Duty, Tim [1 ]
Delsing, Per [1 ]
机构
[1] Chalmers, Dept Microtechnol & Nanosci, SE-41296 Gothenburg, Sweden
来源
LOW TEMPERATURE PHYSICS, PTS A AND B | 2006年 / 850卷
关键词
coulomb blockade; single-electron tunneling; SET; array of tunnel junctions; time correlation; RF-SET;
D O I
暂无
中图分类号
O414.1 [热力学];
学科分类号
摘要
We present experimental and numerical results from a real-time detection of time-correlated single-electron tunneling oscillations in a one-dimensional series array of small tunnel junctions. The electrons tunnel with a frequency f = I/e, where I is the current and e is the electron charge. Experimentally, we have connected a single-electron transistor to the last array island, and in this way measured currents from 5 fA to 1 pA by counting the single electrons. We find that the line width of the oscillation is proportional to the frequency f. The experimental data agrees well with numerical simulations.
引用
收藏
页码:1442 / +
页数:2
相关论文
共 50 条
  • [21] An Analytical Model for NDC Blocks with Single-Electron Tunneling
    Li, Lin
    Chen, Chunhong
    2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2015, : 448 - 451
  • [22] Coulomb blockade oscillations of Si single-electron transistors
    Wang, TH
    Li, HW
    Zhou, JM
    CHINESE PHYSICS, 2001, 10 (09): : 844 - 846
  • [23] Single-electron tunneling behavior of organic-molecule-based electronic device
    So, HM
    Park, JW
    Won, DJ
    Yun, WS
    Kang, Y
    Lee, C
    Kim, JJ
    Kim, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (9A): : 6503 - 6506
  • [24] Quantum-Size Effects on the Characteristics of Single-Electron Tunneling
    Pogosov, V. V.
    Vasyutin, E. V.
    Korotun, A. V.
    JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2007, 1 (02) : 212 - 216
  • [25] Single-electron tunneling transistor implementation of periodic symmetric functions
    Hu, CH
    Cotofana, SD
    Jiang, JF
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2004, 51 (11) : 593 - 597
  • [26] Metal-insulator-transition studied by single-electron tunneling
    Koenemann, J
    Haug, RJ
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2) : 215 - 217
  • [27] Practical aspects of counting electrons with a single-electron tunneling pump
    Keller, M. W.
    EUROPEAN PHYSICAL JOURNAL-SPECIAL TOPICS, 2009, 172 : 297 - 309
  • [28] Quantum-size effects on the characteristics of single-electron tunneling
    V. V. Pogosov
    E. V. Vasyutin
    A. V. Korotun
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2007, 1 : 212 - 216
  • [29] The correlation of the number and the phase uncertainties in the loop-type single-electron tunneling device
    Kim, J
    Kim, JJ
    Oh, S
    Lee, JO
    Yoo, KH
    Park, SI
    Kim, KT
    PHYSICA B, 2000, 284 : 1830 - 1831
  • [30] Compact current and current noise models for single-electron tunneling transistors
    Hu, CH
    Cotofana, SD
    Jiang, JF
    2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY, 2004, : 361 - 364