A polarity-controllable graphene inverter

被引：91
作者：
Harada, Naoki [1 ]
Yagi, Katsunori [1 ]
Sato, Shintaro [1 ]
Yokoyama, Naoki [1 ]
机构：
[1] Fujitsu Labs Ltd, Nanoelect Res Ctr, Atsugi, Kanagawa 2430197, Japan
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 01期
关键词：
field effect transistors; graphene; invertors; modulators; molecular electronics; TRANSISTORS; MOBILITY; DEVICE; GATE;
D O I：
10.1063/1.3280042
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We propose and experimentally demonstrate a functional electron device, which is a polarity-controllable inverter constructed using a four-terminal ambipolar graphene field effect transistor (FET). The FET has two input terminals, both a top gate and a back gate, and the polarity of the FET can be switched by switching the input to the back gate. The slope of the inverter transfer curves can be changed by changing the back-gate voltage. By adding binary digital data and sinusoidal carrier waves into the back gate and the top gate of the inverter, respectively, the one-transistor binary digital phase modulator can be constructed and operated.
引用
收藏
页数：3
相关论文
共 19 条
  • [1] Carbon nanotube electronics
    Avouris, P
    Appenzeller, J
    Martel, R
    Wind, SJ
    [J]. PROCEEDINGS OF THE IEEE, 2003, 91 (11) : 1772 - 1784
  • [2] Bilayer PseudoSpin Field-Effect Transistor (BiSFET): A Proposed New Logic Device
    Banerjee, Sanjay K.
    Register, Leonard F.
    Tutuc, Emanuel
    Reddy, Dharmendar
    MacDonald, Allan H.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2009, 30 (02) : 158 - 160
  • [3] Ultrahigh electron mobility in suspended graphene
    Bolotin, K. I.
    Sikes, K. J.
    Jiang, Z.
    Klima, M.
    Fudenberg, G.
    Hone, J.
    Kim, P.
    Stormer, H. L.
    [J]. SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) : 351 - 355
  • [4] Raman spectrum of graphene and graphene layers
    Ferrari, A. C.
    Meyer, J. C.
    Scardaci, V.
    Casiraghi, C.
    Lazzeri, M.
    Mauri, F.
    Piscanec, S.
    Jiang, D.
    Novoselov, K. S.
    Roth, S.
    Geim, A. K.
    [J]. PHYSICAL REVIEW LETTERS, 2006, 97 (18)
  • [5] Logic suitability of 50-nm In0.7Ga0.3AsHEMTs for Beyond-CMOS applications
    Kim, Dae-Hyun
    del Alamo, Jesus A.
    Lee, Jae-Hak
    Seo, Kwang-Seok
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) : 2606 - 2613
  • [6] Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric
    Kim, Seyoung
    Nah, Junghyo
    Jo, Insun
    Shahrjerdi, Davood
    Colombo, Luigi
    Yao, Zhen
    Tutuc, Emanuel
    Banerjee, Sanjay K.
    [J]. APPLIED PHYSICS LETTERS, 2009, 94 (06)
  • [7] Operation of Graphene Transistors at Gigahertz Frequencies
    Lin, Yu-Ming
    Jenkins, Keith A.
    Valdes-Garcia, Alberto
    Small, Joshua P.
    Farmer, Damon B.
    Avouris, Phaedon
    [J]. NANO LETTERS, 2009, 9 (01) : 422 - 426
  • [8] Current saturation in zero-bandgap, topgated graphene field-effect transistors
    Meric, Inanc
    Han, Melinda Y.
    Young, Andrea F.
    Ozyilmaz, Barbaros
    Kim, Philip
    Shepard, Kenneth L.
    [J]. NATURE NANOTECHNOLOGY, 2008, 3 (11) : 654 - 659
  • [9] Inter-layer screening length to electric field in thin graphite film
    Miyazaki, Hisao
    Odaka, Shunsuke
    Sato, Takashi
    Tanaka, Sho
    Goto, Hidenori
    Kanda, Akinobu
    Tsukagoshi, Kazuhito
    Ootuka, Youiti
    Aoyagi, Yoshinobu
    [J]. APPLIED PHYSICS EXPRESS, 2008, 1 (03) : 0340071 - 0340073
  • [10] Current-induced cleaning of graphene
    Moser, J.
    Barreiro, A.
    Bachtold, A.
    [J]. APPLIED PHYSICS LETTERS, 2007, 91 (16)
12