SnO2-based varistors capable of withstanding surge current

被引:28
作者
Lu, Zhen-ya [1 ]
Chen, Zhiwu [1 ]
Wu, Jian-qing [1 ]
机构
[1] S China Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Special Funct Mat, Guangzhou 510640, Peoples R China
关键词
SnO2; Varistor; Y2O3; Ho2O3; Nonlinear; Surge current test; Failure mode; ZNO VARISTORS; NONOHMIC BEHAVIOR; OXIDE VARISTORS; SNO2; CERAMICS; CONDUCTIVITY; MECHANISM; BARRIERS; SYSTEMS; VOLTAGE;
D O I
10.2109/jcersj2.117.851
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
SnO2-based varistor material was fabricated by doping of CoO, Nb2O5, Cr2O3, and Y2O3 or Ho2O3. The microstructure, nonlinear I-V characteristic and surge current performances have been investigated. The average grain boundary voltage of the obtained materials is close to that of ZnO varistors. Similar to Cr3+, Y3+ or Ho3+ acts as the acceptor in the grain boundaries and the depletion layers. Moderate co-doping Y2O3 or HO2O3 with Cr2O3 is helpful to improve the electrical performances and to prevent poor densification. The obtained optimal samples with a diameter of about 14 mm have a nonlinear coefficient (alpha) of about 60, threshold electric field (E-b) of about 380 V/mm, and the withstanding peak current of 8/20 mu s wave is about 2400 A. Higher surge current will cause failure but no visual damage happen. This kind of failure mode is helpful for safety use of varistors. (C) 2009 The Ceramic Society of Japan. All rights reserved.
引用
收藏
页码:851 / 855
页数:5
相关论文
共 22 条
[1]   Influence of ohmic grain boundaries in ZnO varistors [J].
Bartkowiak, M ;
Mahan, GD ;
Modine, FA ;
Alim, MA .
JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) :273-281
[2]   A comparative study of thermal conductivity in ZnO- and SnO2-based varistor systems [J].
Bueno, PR ;
Varela, JA ;
Barrado, CM ;
Longo, E ;
Leite, ER .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2005, 88 (09) :2629-2631
[3]   Analysis of the admittance-frequency and capacitance-voltage of dense SnO2•CoO-based varistor ceramics [J].
Bueno, PR ;
Oliveira, MM ;
Bacelar-Junior, WK ;
Leite, ER ;
Longo, E ;
Garcia-Belmonte, G ;
Bisquert, J .
JOURNAL OF APPLIED PHYSICS, 2002, 91 (09) :6007-6014
[4]   Role of oxygen at the grain boundary of metal oxide varistors: A potential barrier formation mechanism [J].
Bueno, PR ;
Leite, ER ;
Oliveira, MM ;
Orlandi, MO ;
Longo, E .
APPLIED PHYSICS LETTERS, 2001, 79 (01) :48-50
[5]   Investigation of the electrical properties of SnO2 varistor system using impedance spectroscopy [J].
Bueno, PR ;
Pianaro, SA ;
Pereira, EC ;
Bulhoes, LOS ;
Longo, E ;
Varela, JA .
JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3700-3705
[6]   Nature of the Schottky-type barrier of highly dense SnO2 systems displaying nonohmic behavior [J].
Bueno, PR ;
de Cassia-Santos, MR ;
Leite, ER ;
Longo, E ;
Bisquert, J ;
Garcia-Belmonte, G ;
Fabregat-Santiago, F .
JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) :6545-6548
[7]   DESTRUCTION MECHANISM OF ZNO VARISTORS DUE TO HIGH CURRENTS [J].
EDA, K .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2948-2955
[8]   Electron holography study of active interfaces in zinc oxide varistor materials [J].
Elfwing, M ;
Olsson, E .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (09) :5272-5280
[9]   Mott-Schottky behavior of strongly pinned double Schottky barriers and characterization of ceramic varistors [J].
Fernández-Hevia, D ;
de Frutos, J ;
Caballero, AC ;
Fernández, JF .
JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) :2890-2898
[10]  
GLOT AB, 1989, INORG MATER+, V25, P274