Bulk GaN crystals grown by HVPE

被引：341

作者：

Fujito, Kenji ^{[1
]}

Kubo, Shuichi ^{[1
]}

Nagaoka, Hirobumi ^{[1
]}

Mochizuki, Tae ^{[1
]}

Namita, Hideo ^{[2
]}

Nagao, Satoru ^{[2
]}

机构：

[1] Mitsubishi Chem Corp, Optoelect Lab, Ushiku, Ibaraki 3001295, Japan

[2] Mitsubishi Chem Grp Sci & Technol Res Ctr Inc, Fundamental Technol Lab, Div Res & Dev, Aoba Ku, Yokohama, Kanagawa 2278502, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 10期

关键词：

Growth from vapor; Single-crystal growth; Hydride vapor phase epitaxy; Nitrides; Semiconducting III-V materials; PRESSURE;

D O I：

10.1016/j.jcrysgro.2009.01.046

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We succeeded in preparing very thick c-plane bulk gallium nitride (GaN) crystals grown by hydride vapor phase epitaxy. Growth of the bulk GaN crystals was performed on templates with 3 mu m GaN layer grown by metal organic chemical vapor deposition on (0001) sapphire substrates. Colorless freestanding bulk GaN crystals were obtained through self-separation processes. The crystal's diameter and thickness were about 52 and 5.8 mm, respectively. No surface pits were observed within an area of 46 mm diameter of the bulk GaN crystal. The dislocation density decreased with growth direction (from N-face side to Ga-face side) and ranged from 5.1 x 10(6) cm(-2) near the N-face surface to 1.2 x 10(6) cm(-2) near the Ga-face. A major impurity was Si, and other impurities (O, C, Cl, H, Fe, Ni and Cr) were near or below the detection limits by SIMS measurements. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：3011 / 3014

页数：4

共 16 条

[1] AMMONO method of GaN and AlN production [J].

Dwilinski, R ;

Doradzinski, R ;

Garczynski, J ;

Sierzputowski, L ;

Baranowski, JM ;

Kaminska, M .

[2] The toughest transistor yet [J].

Eastman, LF ;

Mishra, UK .

IEEE SPECTRUM, 2002, 39 (05) :28-+

[3] High-quality nonpolar m-plane GaN substrates grown by HVPE [J].

Fujito, Kenji ;

Kiyomi, Kazumasa ;

Mochizuki, Tae ;

Oota, Hirotaka ;

Namita, Hideo ;

Nagao, Satoru ;

Fujimura, Isao .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (05) :1056-1059

[4] Growth of bulk GaN crystals by the basic ammonothermal method [J].

Hashimoto, Tadao ;

Wu, Feng ;

Speck, James S. ;

Nakamura, Shuji .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (36-40) :L889-L891

[5]

Hiramatsu K, 1999, PHYS STATUS SOLIDI A, V176, P535, DOI 10.1002/(SICI)1521-396X(199911)176:1<535::AID-PSSA535>3.0.CO

[6]

2-I

[7]

Inoue T, 2001, PHYS STATUS SOLIDI B, V223, P15, DOI 10.1002/1521-3951(200101)223:1<15::AID-PSSB15>3.0.CO

[8]

2-D

[9] Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates [J].

Lucznik, B ;

Pastuszka, B ;

Grzegory, I ;

Bockowski, M ;

Kamler, G ;

Litwin-Staszewska, E ;

Porowski, S .

JOURNAL OF CRYSTAL GROWTH, 2005, 281 (01) :38-46

[10] SI-DOPED INGAN FILMS GROWN ON GAN FILMS [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (1A-B) :L16-L19

← 1 2 →