Enhanced p-type Conductivity and Band Gap Narrowing in Heavily B-doped p-BaSi2 Films Grown by Molecular Beam Epitaxy

被引：0

作者：

Khan, M. Ajmal ^{[1
]}

Hara, K. O. ^{[2
]}

Du, W. ^{[1
]}

Baba, M. ^{[1
]}

Nakamura, K. ^{[1
]}

Suzuno, M. ^{[1
]}

Toko, M. ^{[1
]}

Usami, N. ^{[2
,3
]}

Suemasu, T. ^{[1
,3
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

[3] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年

基金：

日本科学技术振兴机构;

关键词：

B-doped BaSi2; MBE; RTA; acceptor level; absorption coefficient; p-n junction; photovoltaic cells; absorption band gap; band gap shrinkage; ELECTRICAL-PROPERTIES; HIGH-TEMPERATURE; BASI2; FILMS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

B-doped p-BaSi2 layers growth by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) on hole concentrations were presented. The influence of B-doping on band gap shrinkage was also addressed. The hole concentration was controlled in the range between 10(17) and 10(20) cm(-3) at room temperature by changing the temperature of the B Knudsen cell crucible. The acceptor level of the B atoms was estimated to be approximately 23 meV. High hole concentrations exceeding 1x10(20) cm(-3) were achieved via dopant activation using RTA at 800 degrees C in Ar. By using this optimized growth condition the absorption edge of the B-doped p-BaSi2 on the Silicon-on-insulator substrate was found to be about 1.23 eV, and it's giving 0.1 eV shrinkage of energy band gap of B-doped BaSi2. The novel p(+)-layer is an important achievement towards p-n junction BaSi2 solar cells.

引用

页码：1357 / 1360

页数：4

共 17 条

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