Effects of nitrogen on dislocations in silicon during heat treatment

被引：49

作者：

Li, DS ^{[1
]}

Yang, DR ^{[1
]}

Que, DL ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat Sci, Hangzhou 310027, Peoples R China

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

关键词：

dislocation; nitrogen; silicon;

D O I：

10.1016/S0921-4526(99)00571-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

By indentation at room temperature followed by annealing at high temperatures, the pinning effect of nitrogen on dislocations in nitrogen-doped Czochralski silicon (NCZ Silicon) has been studied. Experimental results showed that dislocations in NCZ Silicon moved slower and shorter than those in common Czochralski silicon (CZ Silicon) during the annealing. The results also indicated that the activation energy of the dislocations in NCZ Silicon was higher than that in CZ Silicon. The stress relaxing mechanism is discussed. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：553 / 556

页数：4

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