Effects of nitrogen on dislocations in silicon during heat treatment

被引：49
作者：
Li, DS [1 ]
Yang, DR [1 ]
Que, DL [1 ]
机构：
[1] Zhejiang Univ, State Key Lab Silicon Mat Sci, Hangzhou 310027, Peoples R China
来源：
PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷
关键词：
dislocation; nitrogen; silicon;
D O I：
10.1016/S0921-4526(99)00571-2
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
By indentation at room temperature followed by annealing at high temperatures, the pinning effect of nitrogen on dislocations in nitrogen-doped Czochralski silicon (NCZ Silicon) has been studied. Experimental results showed that dislocations in NCZ Silicon moved slower and shorter than those in common Czochralski silicon (CZ Silicon) during the annealing. The results also indicated that the activation energy of the dislocations in NCZ Silicon was higher than that in CZ Silicon. The stress relaxing mechanism is discussed. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：553 / 556
页数：4
相关论文
共 14 条
  • [1] Pinning effect on punched-out dislocations in silicon wafers investigated using indentation method
    Akatsuka, M
    Sueoka, K
    Katahama, H
    Morimoto, N
    Adachi, N
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (11A): : L1422 - L1425
  • [2] The analysis of bending stress and mechanical property of ultralarge diameter silicon wafers at high temperatures
    Fukuda, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07): : 3799 - 3806
  • [3] THE 900-DEGREES-C UPPER YIELD STRESS OF CZOCHRALSKI SILICON SINGLE-CRYSTALS WITH CARBON CONCENTRATIONS OF 4.0X10(14) AND 3.5X10(15) CM(-3)
    FUKUDA, T
    KOIZUKA, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (04) : 2420 - 2424
  • [4] THE RELATIONSHIP BETWEEN THE BENDING STRESS IN SILICON-WAFERS AND THE MECHANICAL STRENGTH OF SILICON-CRYSTALS
    FUKUDA, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (6A): : 3209 - 3215
  • [5] FURUDA T, 1992, APPL PHYS LETT, V60, P1184
  • [6] DEFORMATION OF SILICON AT LOW-TEMPERATURES
    HILL, MJ
    ROWCLIFFE, DJ
    [J]. JOURNAL OF MATERIALS SCIENCE, 1974, 9 (10) : 1569 - 1576
  • [7] INDENTATION DISLOCATION ROSETTES IN SILICON
    HU, SM
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) : 1470 - 1472
  • [8] DISLOCATION PINNING EFFECT OF OXYGEN-ATOMS IN SILICON
    HU, SM
    [J]. APPLIED PHYSICS LETTERS, 1977, 31 (02) : 53 - 55
  • [9] THE EFFECT OF NITROGEN ON THE MECHANICAL-PROPERTIES OF FLOAT ZONE SILICON AND ON CCD DEVICE PERFORMANCE
    JASTRZEBSKI, L
    CULLEN, GW
    SOYDAN, R
    HARBEKE, G
    LAGOWSKI, J
    VECRUMBA, S
    HENRY, WN
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (02) : 466 - 470
  • [10] EFFECTS OF NITROGEN ON DISLOCATION BEHAVIOR AND MECHANICAL STRENGTH IN SILICON-CRYSTALS
    SUMINO, K
    YONENAGA, I
    IMAI, M
    ABE, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5016 - 5020
12