High-Performance Solution-Processable N-Shaped Organic Semiconducting Materials with Stabilized Crystal Phase

被引：207

作者：

Mitsui, Chikahiko ^{[1
]}

Okamoto, Toshihiro ^{[1
,2
,3
]}

Yamagishi, Masakazu ^{[1
]}

Tsurumi, Junto ^{[1
,2
]}

Yoshimoto, Kazumi ^{[1
]}

Nakahara, Katsumasa ^{[1
,2
]}

Soeda, Junshi ^{[1
,2
]}

Hirose, Yuri ^{[1
]}

Sato, Hiroyasu ^{[4
]}

Yamano, Akihito ^{[4
]}

Uemura, Takafumi ^{[1
]}

Takeya, Jun ^{[1
,2
]}

机构：

[1] Univ Tokyo, Grad Sch Frontier Sci, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

[2] Osaka Univ, ISIR, Osaka 5670047, Japan

[3] JST, PRESTO, Kawaguchi, Saitama 3320012, Japan

[4] Rigaku Corp, Tokyo 1968666, Japan

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 26期

关键词：

THERMAL-STABILITY; TRANSISTORS;

D O I：

10.1002/adma.201400289

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

N-shaped organic semiconductors are synthesized via four steps from a readily available starting material. Such semiconductors exhibit preferable ionization potential for p-type operation, thermally stable crystalline phase over 200 degrees C, and high carrier mobility up to 16 cm 2 V-1 s(-1) (12.1 cm(2) V-1 s(-1) on average) with small threshold voltages in solution-crystallized field-effect transistors.

引用

页码：4546 / +

页数：7

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