Schottky barrier height in GaN/AlGaN heterostructures

被引：21

作者：

Anwar, A. F. M. ^{[1
]}

Faraclas, Elias W. ^{[1
]}

机构：

[1] Univ Connecticut, Dept Elect & Comp Engn, Storrs, CT 06269 USA

来源：

SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 06期

关键词：

GaNHEMT; Schottky barrier height; modeling; numerical simulation;

D O I：

10.1016/j.sse.2006.04.011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a modified expression for the Schottky barrier height, Phi(B), that takes into account the effect of total polarization and the 2DEG concentration in GaN at the GaN/AIGaN heterointerface through the incorporation of Schottky barrier lowering. Updated Schottky barrier height for HEMTs and its dependence upon gate bias is reported. The positive surface charge is estimated to be 2.615 x 10(14) cm(-2) which corresponds to a trap level located 0.905 eV below the conduction band. 2D numerical simulations, using the modified Schottky barrier height, matches experimental data. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：1041 / 1045

页数：5

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