Ultrafast Crystallization of Amorphous Silicon Thin Films by Using an Electron Beam Annealing Method

被引：1

作者：

Kim, Changheon ^{[1
]}

Lim, Sangwoo ^{[1
]}

Jeong, Chaehwan ^{[2
]}

机构：

[1] Yonsei Univ, Dept Chem & Biomol Engn, Seoul 120749, South Korea

[2] Korea Inst Ind Technol, Appl Opt & Energy R&BD Grp, Kwangju 500480, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2014年 / 64卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

Amorphous silicon; Thin films; Electron-beam annealing; Structural properties; X-ray diffraction; RAMAN-SPECTRA; SOLAR-CELL; RECRYSTALLIZATION; MICROCRYSTALLINE; IRRADIATION; SCATTERING;

D O I：

10.3938/jkps.64.1091

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An electron-beam annealing method has been adapted for rapid crystallization of p-type amorphous-silicon thin films deposited by using an evaporation method. The amorphous phase of silicon thin-film was crystallized by using an accelerating DC voltage higher than the 4.0 kV for 120 s. From the crystalline properties, the nanocrystalline silicon thin film after electron-beam annealing showed mainly (111), (220), and (311) orientations and a crystalline volume fraction (X-c) of 93.6%. The crystalline properties improved with increasing DC voltage for rapid annealing times. The electron-beam annealing method can be a powerful method for achieving rapid crystallization of amorphous materials.

引用

页码：1091 / 1095

页数：5

共 21 条

[1]

Anh S. C., 2004, MET MATER INT, V10, P103

[2] EXPERIMENTAL-DETERMINATION OF THE NANOCRYSTALLINE VOLUME FRACTION IN SILICON THIN-FILMS FROM RAMAN-SPECTROSCOPY [J].

BUSTARRET, E ;

HACHICHA, MA ;

BRUNEL, M .

APPLIED PHYSICS LETTERS, 1988, 52 (20) :1675-1677

[3] Raman investigation of silicon nanocrystals: quantum confinement and laser-induced thermal effects [J].

Duan, Y. ;

Kong, J. F. ;

Shen, W. Z. .

JOURNAL OF RAMAN SPECTROSCOPY, 2012, 43 (06) :756-760

[4] Modified Raman confinement model for Si nanocrystals [J].

Faraci, G ;

Gibilisco, S ;

Russo, P ;

Pennisi, AR ;

La Rosa, S .

PHYSICAL REVIEW B, 2006, 73 (03)

[5] Photovoltaics: technology overview [J].

Green, MA .

ENERGY POLICY, 2000, 28 (14) :989-998

[6] Controlled line shaped electron beam for silicon zone melting recrystallization on float glass substrates -: art. no. 063901 [J].

Gromball, F ;

Groth, C ;

Müller, J .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2005, 76 (06)

[7] THE STRUCTURE AND PROPERTIES OF NANOSIZE CRYSTALLINE SILICON FILMS [J].

HE, YL ;

YIN, CZ ;

CHENG, GX ;

WANG, LC ;

LIU, XN ;

HU, GY .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (02) :797-803

[8] RAMAN-SCATTERING FROM HYDROGENATED MICROCRYSTALLINE AND AMORPHOUS-SILICON [J].

IQBAL, Z ;

VEPREK, S .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (02) :377-392

[9] RECRYSTALLIZATION OF AMORPHIZED POLYCRYSTALLINE SILICON FILMS ON SIO2 - TEMPERATURE-DEPENDENCE OF THE CRYSTALLIZATION PARAMETERS [J].

IVERSON, RB ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) :1675-1681

[10] Characterization of intrinsic a-Si:H films prepared by inductively coupled plasma chemical vapor deposition for solar cell applications [J].

Jeong, Chaehwan ;

Boo, Seongjae ;

Jeon, Minsung ;

Kamisako, Koichi .

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2007, 7 (11) :4169-4173

← 1 2 3 →