Switching Characteristics of Nanowire Feedback Field-Effect Transistors with Nanocrystal Charge Spacers on Plastic Substrates

被引：31
|
作者：
Jeon, Youngin [1 ]
Kim, Minsuk [1 ]
Kim, Yoonjoong [1 ]
Kim, Sangsig [1 ]
机构：
[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea
来源：
ACS NANO | 2014年 / 8卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
subthreshold swing; silicon nanowires; feedback loop; field-effect transistor; plastic substrate; I-MOS; SILICON; MEMORY;
D O I：
10.1021/nn500494a
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this study, we demonstrate the abruptly steep-switching characteristics of a feedback field-effect transistor (FBFET) with a channel consisting of a p(+)-i-n(+) Si nanowire (NW) and charge spacers of discrete nanocrystals on a plastic substrate. The NW FBFET shows superior switching characteristics such as an on/off current ratio of similar to 10(5) and an average subthreshold swing (SS) of 30.2 mV/dec at room temperature. Moreover, the average SS and threshold voltage values can be adjusted by programming. These sharp switching characteristics originate from a positive feedback loop generated by potential barriers in the intrinsic channel area. This paper describes in detail the switching mechanism of our device.
引用
收藏
页码：3781 / 3787
页数：7
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