On the size distribution in three-dimensional quantum-dot crystals

被引：1
|
作者：
Vengrenovich, R. D. [1 ]
Ivanskii, B. V. [1 ]
Stasyk, M. O. [1 ]
Panko, I. I. [1 ]
机构：
[1] Fedkovich Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine
来源：
SEMICONDUCTORS | 2014年 / 48卷 / 06期
关键词：
ASSEMBLED GE ISLANDS; NANOSTRUCTURES; HETEROSTRUCTURES; SURFACE;
D O I：
10.1134/S1063782614060256
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The size distribution function of nanodots in artificial three-dimensional (Si)Ge/Si and In(Ga)As/GaAs quantum dot crystals grown using templates with perfect periodicity is calculated. Pyramidal nanodots were modeled by cone-shaped clusters for which the Thomson formula was derived, which is necessary to determine the growth (dissolution) rate of clusters during Ostwald ripening. A comparison of the calculated curve with experimental histograms shows that the size distribution itself is formed during Ostwald ripening and is caused by features of Ge and InAs quantum-dot formation on preliminarily textured Si and GaAs substrates.
引用
收藏
页码：783 / 791
页数：9
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