UV scanning photoluminescence spectroscopy investigation of 6H-and 4H-SiC

被引：3

作者：

Masarotto, L ^{[1
]}

Bluet, JM ^{[1
]}

Guillot, G ^{[1
]}

机构：

[1] CNRS, UMR 5511, Lab Phys Matiere, INSA Lyon, FR-69621 Villeurbanne, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

dislocations; micropipes; polytypes; scanning photoluminescence;

D O I：

10.4028/www.scientific.net/MSF.389-393.601

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on a scanning photoluminescence (SPL) apparatus with UV excitation (244 nm) developed for SiC analysis. Examples of the effectiveness of this technique to characterize SiC are developed. Indeed, we demonstrate that SPL can be used for micropipe and screw dislocation density determination and for polytypes inclusion mapping. The gettering effect of non radiative traps in the vicinity of screw dislocations is evidenced by spectral measurements.

引用

页码：601 / 604

页数：4

共 4 条

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Bluet, JM
Berenguer, M
Girard, P
Guillot, G
[J]. SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 393 - 396
[3] SGHAIER N, 2000, IN PRESS MRS FALL M
[4] Mapping of vanadiun-related luminescence on SiC wafer at room temperature
Tajima, M
Kumagaya, Y
Nakata, T
Inoue, M
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