Thermoelectric power of EuNi2(Si1-xGex)2

被引：8

作者：

Sakurai, J

Fukuda, S ^{[1
]}

Mitsuda, A

Wada, H

Shiga, M

机构：

[1] Toyama Univ, Dept Phys, Toyama 9308555, Japan

[2] Kyoto Univ, Dept Mat Sci & Engn, Sakyo Ku, Kyoto 6068501, Japan

来源：

PHYSICA B | 2000年 / 281卷

关键词：

thermoelectric power; valence transition; EuNi2(Si1-xGex)(2);

D O I：

10.1016/S0921-4526(99)00865-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Measurements of the thermoelectric power S were carried out for EuNi2(Si1-xGex)(2) with 0.50 less than or equal to x less than or equal to 0.95 as a function of temperature T from 2 to 300 K. The occurrence of the temperature-induced valence transition between the Eu3+ State and the Eu2+ state evidenced from the measurements of magnetic susceptibility was confirmed as the anomalies of S(T) curves. The large initial slopes of S at T = 0 for some samples were observed and discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：134 / 135

页数：2

共 6 条

[1] INTERMEDIATE VALENCE ON DILUTE EUROPIUM IONS [J].

FRANZ, W ;

STEGLICH, F ;

ZELL, W ;

WOHLLEBEN, D ;

POBELL, F .

PHYSICAL REVIEW LETTERS, 1980, 45 (01) :64-67

[2]

SAKURAI, 1993, TRANSPORT THERMAL PR, P165

[3] Temperature- and field-induced valence transitions of EuNi2(Si1-xGex)(2) [J].

Wada, H ;

Nakamura, A ;

Mitsuda, A ;

Shiga, M ;

Tanaka, T ;

Mitamura, H ;

Goto, T .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (37) :7913-7923

[4] Thermal expansion and electrical resistivity of EuNi2(Si1-xGex)2 [J].

Wada, H ;

Sakata, T ;

Nakamura, A ;

Mitsuda, A ;

Shiga, M ;

Ikeda, Y ;

Bando, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1999, 68 (03) :950-953

[5] CRITICAL-EVALUATION OF EU VALENCES FROM LIII-EDGE X-RAY-ABSORPTION AND MOSSBAUER-SPECTROSCOPY OF EUNI2SI2-XGEX [J].

WORTMANN, G ;

NOWIK, I ;

PERSCHEID, B ;

KAINDL, G ;

FELNER, I .

PHYSICAL REVIEW B, 1991, 43 (07) :5261-5268

[6]

Ziman J.M., 1960, ELECT PHONONS

← 1 →