One-Step Electrochemical Deposition of Hierarchical CuS Nanostructures on Conductive Substrates as Robust, High-Performance Counter Electrodes for Quantum-Dot-Sensitized Solar Cells

被引:88
|
作者
Wang, Feifan [1 ,2 ]
Dong, Hui [1 ]
Pan, Jinlong [1 ]
Li, Jingjian [1 ]
Li, Qi [1 ]
Xu, Dongsheng [1 ,2 ]
机构
[1] Peking Univ, Beijing Natl Lab Mol Sci, State Key Lab Struct Chem Unstable & Stable Speci, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
[2] Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
基金
中国国家自然科学基金;
关键词
EFFICIENCY; COMPOSITE; FILMS; CDSE;
D O I
10.1021/jp505737u
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An ideal counter electrode, with high electrocatalytic activity, high performance stability, and applicable fabrication simplicity, is essential to give full play to the advantages of quantum-dot-sensitized solar cells (QDSSCs) such as high theoretical efficiency and simple synthetic procedure. Herein, we report a facile one-step electrochemical deposition approach for the growth of hierarchical covellite (CuS) nanostructures on conductive glass substrates. The as-synthesized copper sulfide can be employed directly as a robust, low-cost, and high-efficiency counter electrode without any post-treatments for QDSSCs filled with aqueous sulfide/polysulfide (S2-/S-n(2-)) electrolyte. The morphology and structure of the well-crystalline, strongly substrate-adhesive hierarchical CuS nanostructured film have been studied by X-ray and electron-based characterizations. QDSSC using this newly synthesized CuS as counter electrode achieves a higher power conversion efficiency of 4.32% than the one applying cuprous sulfide (Cu2S) on brass substrate (4.08%) or platinum counter electrode (2.85%). Furthermore, this CuS counter electrode shows a high and consistent electrocatalytic activity toward polysulfide reduction confirmed by the electrochemical measurements, destining the improved photovoltaic performance and superior stability of the corresponding QDSSC device.
引用
收藏
页码:19589 / 19598
页数:10
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