Influence of doping concentration on Ni-induced lateral crystallization of amorphous silicon films

被引：4

作者：

Minagawa, Y

Yazawa, Y

Muramatsu, S

机构：

[1] Hitachi Cable Ltd, Adv Res Ctr, Tsuchiura, Ibaraki 3000026, Japan

[2] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 74卷 / 1-4期

关键词：

MILC; Ni; Si film; crystallization;

D O I：

10.1016/S0927-0248(02)00086-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Nickel-metal-induced lateral crystallization (MILC) was used to fabricate polycrystalline silicon thin films on glass substrates. Patterned Ni lines were formed on amorphous Si films by a lift-off process using photo resist. The samples were annealed in an N-2 atmosphere in a furnace at temperatures ranging from 550degreesC to 600degreesC. Both the doping concentration of the Si films and the annealing temperature strongly affected the orientation of the crystals. A p-type poly-Si film with a boron concentration of 5x10(19) cm(-3) annealed at 550 C was found to be strongly oriented in the <220> direction. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：283 / 287

页数：5

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