Optimization of Ru intermediate layer in CoCr-based perpendicular magnetic recording media

被引:10
作者
Park, JW
Kim, YK [1 ]
Lee, TH
Oh, HS
Lee, BK
机构
[1] Korea Univ, Div Mat Sci & Engn, Seoul 136701, South Korea
[2] Samsung Adv Inst Technol, Storage Lab, Suwon 440600, South Korea
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2004年 / 201卷 / 08期
关键词
D O I
10.1002/pssa.200304631
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The influence of intermediate layer characteristics on the structural and magnetic properties of CoCr-based perpendicular media has been investigated. CoCrPt-SiO2 stacks were deposited on a 2.5-inch glass substrates. To improve intermediate layer properties without noticeable sacrifice of magnetic and structural properties of recording layer, the conditions of intermediate layer deposition were varied. The recording layer was deposited on the Ru intermediate layer in 20 mTorr Ar pressure to increase coercivity. As a result, coercivity is increased from 2.2 to 3.7 kOe because the interface between Ru intermediate layer and recording layer was rougher than the interface formed at low At pressure. Additionally, to increase perpendicular anisotropy of recording layer, the Ru sputtering temperature condition was varied, ranging from 150 degreesC to 300 degreesC. However, the perpendicular anisotropy of recording layer was decreased. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:1763 / 1766
页数:4
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