Extended metallization reliability testing: Combining standard wafer level with product tests to increase test sensitivity

被引：1

作者：

Born, V. ^{[1
]}

Beck, M. ^{[1
]}

Bosholm, O. ^{[1
]}

Dalleau, D. ^{[1
]}

Glenz, S. ^{[1
]}

Haverkamp, I. ^{[1
]}

Kurz, G. ^{[1
]}

Lange, F. ^{[1
]}

Vest, A. ^{[1
]}

机构：

[1] Qimonda, Reliabil Methodol, D-01099 Dresden, Germany

来源：

MICROELECTRONICS RELIABILITY | 2009年 / 49卷 / 01期

关键词：

Compendex;

D O I：

10.1016/j.microrel.2008.10.017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For future semiconductor technologies with larger interconnect aspect ratios, metallization is more prone to stress and electro migration. Therefore. metallization reliability is expected to become increasingly important. However, challenges arise if test structures and test methodologies are not accommodated to trace reliability issues with sufficient sensitivity. In such cases long test times and high volume tests are required to guaranty the metallization reliability. An extended test method is presented which addresses these problems by directly investigating the product at wafer level instead of a limited set of test structures. The method will be demonstrated for the example of stress migration in aluminum filled vias. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：74 / 78

页数：5

共 18 条

[1] ARMBRUST DS, 1998, INTEGRATION HDPCVD F
[2] BORN V, UNPUB
[3] CHAN A, 1994, P IEEE INT WORKSH ME, P26
[4] GAYNOR J, 1997, SEMICOND INT
[5] Hahn J, 2004, ADVANCED METALLIZATION CONFERENCE 2004 (AMC 2004), P333
[6] Application of a bitmap analysis system to the forefront of DRAM devices development
Hamada, T
Sugimoto, M
[J]. 1997 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP - ASMC 97 PROCEEDINGS: THEME - THE QUEST FOR SEMICONDUCTOR MANUFACTURING EXCELLENCE: LEADING THE CHARGE INTO THE 21ST CENTURY, 1997, : 222 - 227
[7] Hommel M, 2002, AIP CONF PROC, V612, P157, DOI 10.1063/1.1469900
[8] *JEP, 2000, JEP139
[9] *JEP, 2003, JEP122C
[10] Lee S.-G., 1999, IITC M, P149

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