Dielectric Reliability of 50 nm Half Pitch Structures in Aurora® LK

被引：8

作者：

Demuynck, Steven ^{[1
]}

Kim, Honggun ^{[2
]}

Huffman, Craig ^{[1
]}

Darnon, Maxime ^{[1
]}

Struyf, Herbert ^{[1
]}

Versluijs, Janko ^{[1
]}

Claes, Martine ^{[1
]}

Vereecke, Guy ^{[1
]}

Verdonck, Patrick ^{[1
]}

Volders, Henny ^{[1
]}

Heylen, Nancy ^{[1
]}

Kellens, Kristof ^{[1
]}

De Roest, David ^{[3
]}

Sprey, Hessel ^{[3
]}

Beyer, Gerald ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Samsung Elect, Hwasung 445701, Gyeonnggi Do, South Korea

[3] ASM Belgium, B-3001 Louvain, Belgium

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期

关键词：

D O I：

10.1143/JJAP.48.04C018

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dielectric reliability of Aurora (R) LK (kappa = 3.0) material has been evaluated on a 50 nm half pitch test structure. These were fabricated using a double patterning scheme and TiN metal hard mask. The introduction of a suitable post-etch residue removal step and close-coupled processing between Cu electroplating and chemical mechanical polishing were found to be key for achieving high yield. Median time-dependent dielectric lifetime of 10 years is reached at an electrical field of 1.4 MV/cm, comparable to earlier reported results with SiO(2) as dielectric. The reliability performance is found to be significantly layout dependent with corners being weak points due to local field enhancement. (C) 2009 The Japan Society of Applied Physics

引用

页数：4

共 4 条

[1]

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[2]

Kwak N, 2007, IEEE INT INTERC TECH, P150

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Hong, J. W. ;

Seong, G. J. ;

Lee, J. M. ;

Park, H. ;

Baek, J. M. ;

Choi, K. I. ;

Park, B. L. ;

Bae, J. Y. ;

Choi, G. H. ;

Kim, S. T. ;

Chung, U. I. ;

Moon, J. T. ;

Oh, J. H. ;

Son, J. H. ;

Jung, J. H. ;

Hah, S. ;

Lee, S. Y. .

PROCEEDINGS OF THE IEEE 2007 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2007, :64-66

[4]

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