Study of GaAs/AlAs heterointerface formation during MBE on a GaAs (311)A surface by RHEED

被引：0
|
作者：
Preobrazhenskii, VV
Semyagin, BR
Putyato, MA
Nizamov, RI
机构：
来源：
COMPOUND SEMICONDUCTORS 1996 | 1997年 / 155期
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The growth and interface formation processes during molecular-beam epitaxy (MBE) of GaAs and AlAs on a (311)A surface were investigated by reflection high-energy electron diffraction (RHEED). The oscillations of RHEED pattern features with the period corresponding to the deposition of one monolayer on this surface during both homo- and heteroepitaxy were observed. The peculiarities of dynamic changes of a RHEED pattern specular spot intensity during heteroepitaxy were studied in a wide range of diffraction and growth conditions. The analysis of the experimental data allows the conclusion about a layer-by-layer mechanism of heterointerface formation in this system.
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页码：315 / 318
页数：4
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